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Renesas Electronics Corporation AT25QL321-SHE-T — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25QL321-SHE-T

MPNAT25QL321-SHE-T
Active

32 MBIT, 1.8V (1.7V TO 2V), -40?

$0.8100Ref. price · indicative, final on quote
Packaging8-SOIC (0.209", 5.30mm Width)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25QL321-SHE-T specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.7V ~ 2V
Clock frequency104 MHz
Memory interfaceSPI - Quad I/O, QPI
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyFLASH - NOR (SLC)
Access time7 ns
Memory size32Mbit
Memory formatFLASH
Case8-SOIC (0.209\", 5.30mm Width)
Memory organization4M x 8
Write cycle time - word, page150µs, 5ms