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Renesas Electronics Corporation AT25PE80-SSHN-B — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25PE80-SSHN-B

MPNAT25PE80-SSHN-B
Active

8 MBIT, WIDE VCC (1.7V TO 3.6V),

$2.5000Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25PE80-SSHN-B specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.7V ~ 3.6V
Clock frequency133 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTube
TechnologyFLASH - NOR (SLC)
Access time6 ns
Memory size8Mbit
Memory formatFLASH
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization1M x 8
Write cycle time - word, page8µs, 4ms