Skip to main content
Renesas Electronics Corporation AT25DF081-SSHN-B — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25DF081-SSHN-B

MPNAT25DF081-SSHN-B
Obsolete
$1.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25DF081-SSHN-B specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.65V ~ 1.95V
Clock frequency66 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTube
TechnologyFLASH
Memory size8Mbit
Memory formatFLASH
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization256 Bytes x 4096 pages
Write cycle time - word, page15µs, 5ms