Skip to main content
Renesas Electronics Corporation AT25DF041B-MHN-T — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25DF041B-MHN-T

MPNAT25DF041B-MHN-T
Active

IC FLASH 4MBIT SPI 104MHZ 8UDFN

$1.6000Ref. price · indicative, final on quote
Packaging8-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25DF041B-MHN-T specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Voltage1.65V ~ 3.6V
Frequency104 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyFLASH
Memory size4Mbit
Memory formatFLASH
Case8-UDFN Exposed Pad
Memory organization512K x 8
Write cycle time - word, page8µs, 2.5ms