NXP Semiconductors BFU5 Memory Series

4 variants · NXP SemiconductorsAll Memory (DRAM / SRAM / Flash / EEPROM) →

About the NXP Semiconductors BFU5 Memory Series

The NXP Semiconductors BFU5 Memory Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common FET type of NPN, mounting of Surface Mount and operating temperature of -40°C ~ 150°C (TJ). Variants differ by case, current - collector (Ic) and DC current gain (hFE) (Min) @ ic, vce, so you can match the exact case your application requires using the selection guide below. All listed NXP Semiconductors BFU5 Memory Series part numbers are active and orderable.

Select a variant by

Case: SC-70, SOT-323 · SOT-143R · TO-243AA · TO-253-4, TO-253AA
Current - collector (Ic): 30mA · 40mA · 200mA
DC current gain (hFE) (Min) @ ic, vce: 60 @ 5mA, 8V · 60 @ 10mA, 8V · 60 @ 80mA, 8V
Frequency: 8GHz · 10GHz · 10.5GHz · 11GHz
Gain: 6.5dB · 18.5dB · 20dB · 21dB
Power - max: 2W · 450mW
Noise figure (dB typ @ f): 0.6dB @ 900MHz · 0.65dB @ 900MHz

Shared specifications

FET type: NPN
Mounting: Surface Mount
Operating temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)
Voltage - collector emitter breakdown: 12V

Variant comparison

Parameter	BFU530XRR	BFU520R	BFU520WX	BFU590QX
Case	SOT-143R	TO-253-4, TO-253AA	SC-70, SOT-323	TO-243AA
Current - collector (Ic)	40mA	30mA	30mA	200mA
DC current gain (hFE) (Min) @ ic, vce	60 @ 10mA, 8V	60 @ 5mA, 8V	60 @ 5mA, 8V	60 @ 80mA, 8V
Frequency	11GHz	10.5GHz	10GHz	8GHz
Gain	21dB	20dB	18.5dB	6.5dB
Power - max	450mW	450mW	450mW	2W
Noise figure (dB typ @ f)	0.65dB @ 900MHz	0.65dB @ 900MHz	0.6dB @ 900MHz	—

Request a quote on any NXP Semiconductors BFU5 Memory Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.