80 V N-channel MOSFET with AEC-Q101 qualification
The Nexperia PMPB95ENEA/FX is an N-channel enhancement-mode MOSFET rated for 80 V drain-source breakdown, built for automotive and industrial power-switching applications that demand AEC-Q101 reliability.
Gate charge and switching behaviour
Total gate charge is 14.9 nC at Vgs = 10 V, which means a gate driver sourcing 1 A can switch the FET in roughly 15 ns — fast enough for a 100 kHz DC-DC converter without excessive cross-conduction. The gate-source voltage is clamped at ±20 V absolute maximum, so a standard 12 V or 15 V gate drive rail stays well inside the safe operating area without an external zener clamp.
Package and thermal budget
Surface-mount package (Bulk shipment) — the 1.6 W power dissipation rating assumes a standard FR-4 footprint with minimal copper; a larger drain pad or a via-stitched thermal land pulls the RthJA down and raises the usable current above the 4.1 A switching current spec.