NXP PMN45EN,135 — 30 V N-channel TrenchMOS FET in SC-74
The 30 V, 5.2 A N-channel enhancement-mode MOSFET built on the TrenchMOS™ process. It is housed in a 6-pin SC-74 (SOT-457) surface-mount package, also designated as 6-TSOP.
Key ratings and what they mean for the BOM
The 30 V drain-source voltage (Vdss) is the maximum rail the FET can block in the off state. On-resistance is 40 mOhm maximum at a 3 A drain current with 10 V gate drive. Input capacitance is 495 pF at 25 V Vds. This is a moderate value; the switching losses from charging and discharging Ciss are manageable for PWM frequencies up to a few hundred kHz.
Package and mounting
The SC-74 (SOT-457) is a 6-lead surface-mount package. The 6-TSOP supplier device code is the same footprint.
Lifecycle and compliance
It is ROHS3 compliant, covering the full restricted-substance list including the four phthalates.
