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NXP Semiconductors PMK50XP,518 — Discrete Semiconductors

Nexperia PMK50XP,518 P-Channel MOSFET, 20V, 7.9A, TrenchMOS

MPNPMK50XP,518
Active

Nexperia TrenchMOS P-Channel MOSFET, PMK50XP,518, 20V Vds, 7.9A Id, 50mOhm Rds(on) at 4.5V, ±12V Vgs, 10nC Qg, -55°C to 150°C Tj, Surface Mount.

$0.10Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

PMK50XP,518 Technical Specifications
ParameterValue
SeriesTrenchMOS™
FET typeP-Channel
Mounting_typeSurface Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±12 V
Power_w5.0
Package_typeBulk
Capacitance_uf0.001
Product_statusActive
Supply_voltage_v20.0
Vgs(Th) (Max) @ id950mV @ 250µA
Switching_current_a7.9
Rds on (Max) @ id, vgs50mOhm @ 2.8 A, 4.5 V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V

Product details

P-channel load switch at 20 V, 7.9 A

The Nexperia PMK50XP,518 is a P-Channel TrenchMOS MOSFET rated for a maximum drain current of 7.9 A at a drain-source voltage of 20 V.

Gate drive and switching budget

Gate threshold voltage is 950 mV max at 250 µA drain current. Total gate charge at 4.5 V is 10 nC. Maximum gate-source voltage is ±12 V — a standard 10 V gate drive is within the absolute maximum, but a 12 V rail needs a series resistor or zener clamp to stay inside the limit.

Temperature range and package

Junction temperature range is -55°C to 150°C, covering automotive under-hood and industrial environments. The surface-mount package (Bulk delivery) requires a standard reflow profile; the thermal pad area on the PCB sets the effective RthJA.

Frequently asked questions

What is the Rds(on) of PMK50XP,518?

The on-resistance is 50 mOhm maximum at 2.8 A drain current with a 4.5 V gate drive.

What is the gate charge of PMK50XP,518?

Total gate charge is 10 nC maximum at 4.5 V gate-source voltage.