Skip to main content
NXP Semiconductors MRF300AN
NXP Semiconductors

MRF300AN RF MOSFET LDMOS, 300W, 27-250 MHz, TO-247

MPNMRF300AN
End of Life

NXP MRF300AN LDMOS RF power transistor, 300W output, 27-250 MHz, 28dB gain, TO-247-3 through-hole package.

$53.08Ref. price · indicative, final on quote
MRF300AN datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

MRF300AN Technical Specifications
ParameterValue
Mounting typeThrough Hole
FET typeLDMOS
Voltage - test50 V
Power - output300W
Frequency27MHz ~ 250MHz
Gain28dB
PackageTube
CaseTO-247-3

Product details

RF power transistor for 27–250 MHz bands

The NXP MRF300AN is an LDMOS RF power transistor delivering 300 W output across 27 MHz to 250 MHz, with a typical gain of 28 dB at 50 V test voltage. It comes in a TO-247-3 through-hole package (supplier device package TO-247). This is a current-production, ROHS3-compliant device, still actively manufactured.

Lifecycle and sourcing reality

The MRF300AN carries an Active product status and ROHS3 compliance. No last-time-buy or obsolescence notice is in effect.

Frequently asked questions

What is the frequency range and power output of MRF300AN?

The MRF300AN covers 27 MHz to 250 MHz and delivers 300 W output at 50 V test voltage, with a typical gain of 28 dB.

Does MRF300AN require a heatsink?

Yes, at 300 W output the device dissipates significant heat. The TO-247 package tab must be mounted to a heatsink with good thermal interface — plan for a substantial thermal solution in your BOM.