Automotive-grade power switch for 12 V and 24 V loads
The Nexperia BUK9245-55A,118 is an N-channel TrenchMOS™ power MOSFET rated for 55 V drain-source breakdown and 28 A continuous drain current at 25 °C case temperature. It is qualified to AEC-Q101, making it suitable for automotive and high-reliability power-switching applications including motor drives, solenoid actuators, DC-DC converters, and load-distribution switches in engine bays and chassis domains. The 40 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses manageable for a DPAK part at this current level.
40 mOhm Rds(on) — what it means for the BOM
At 5 A load current, 40 mOhm on-resistance produces 1 W of conduction loss (I²R). With 70 W package dissipation capability, that leaves thermal headroom for switching losses and ambient temperature derating. The gate drive is specified at 4.5 V for minimum Rds(on) and 10 V for maximum — a 5 V logic-level gate drive will not fully enhance the channel; plan for a 10 V gate supply or a dedicated gate driver IC to achieve the rated 40 mOhm.
DPAK package — reflow and footprint notes
The TO-252-3 (DPAK) package has a large exposed drain tab for heat sinking through the PCB copper. Standard reflow profiles for lead-free solder work here — no exotic process steps. The tab is electrically live at drain potential, so the PCB footprint must either isolate it or connect it to the drain node. Check the tab clearance to adjacent traces for high-voltage creepage. The part is surface-mount, compatible with pick-and-place assembly.
Active lifecycle — no LTB risk for production
For new designs or existing BOM lines, there is no last-time-buy pressure. The AEC-Q101 qualification means the part has passed automotive-grade reliability testing, which also benefits industrial and telecom applications where extended temperature range and ruggedness are required.