100 V, 26 A N-channel TrenchMOS for automotive and industrial power switching
The device is housed in a D2PAK (TO-263-3) surface-mount package with a tab for thermal dissipation.
60 mOhm on-resistance — what it means for conduction loss
At 26 A full load, conduction loss (I²R) reaches about 40 W, which the 106 W power dissipation rating can handle with adequate heatsinking. The 10 V drive voltage is typical for gate drivers in automotive and industrial systems; the part also specifies a 4 V threshold at 1 mA, so logic-level drive at 5 V may not fully enhance the channel — confirm gate drive margin against the threshold and transfer curves.
Temperature range and AEC-Q101 qualification
Operating junction temperature spans -55°C to 175°C, covering under-hood automotive, engine bay, and high-ambient industrial environments. The AEC-Q101 qualification means the part has passed stress tests for reliability in automotive-grade assemblies, including HTRB, H3TRB, and temperature cycling. The 175°C maximum junction allows headroom for derating in high-power switching applications.
Package and footprint: D2PAK (TO-263-3)
The D2PAK (TO-263-3) surface-mount package has two leads plus a tab for drain connection and thermal transfer. Input capacitance is 1377 pF at 25 V drain-source, which is moderate — gate drive current should be sized to keep switching losses acceptable at the target frequency.