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NXP Semiconductors BUK7631-100E,118
NXP Semiconductors

BUK7631-100E,118 N-Channel MOSFET, 100V 34A D2PAK, AEC-Q101

MPNBUK7631-100E,118
End of Life

NXP BUK7631-100E,118, Automotive AEC-Q101 TrenchMOS™ N-Channel MOSFET, 100V Vdss, 34A Id, 31mOhm Rds(on) at 10V, D2PAK (TO-263AB) surface mount.

$0.55Ref. price · indicative, final on quote
BUK7631-100E,118 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BUK7631-100E,118 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs31mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs29.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1738 pF @ 25 V

Product details

Gate drive and switching characteristics

The specified gate threshold voltage (Vgs(th)) is 4 V maximum at 1 mA drain current, and the recommended drive voltage for minimum on-resistance is 10 V. Total gate charge (Qg) is 29.4 nC at 10 V, which gives a reasonable switching speed for a 34 A device — expect moderate gate-drive power in PWM applications. Input capacitance (Ciss) is 1738 pF at 25 V drain-source, a figure to consider when sizing the gate-drive source impedance for rise/fall time targets.

Thermal and environmental range

Junction temperature range spans -55°C to 175°C. Maximum power dissipation is 96 W at case temperature. The maximum gate-source voltage is ±20 V.

Sourcing and lifecycle

No last-time-buy or end-of-life notice is listed. No official second-source or pin-compatible alternate is listed in the available documentation.

Frequently asked questions

Is BUK7631-100E,118 AEC-Q101 qualified?

Yes, the BUK7631-100E,118 is part of the Automotive, AEC-Q101 qualified TrenchMOS™ series, making it suitable for automotive applications requiring stress-tested reliability.

What is the maximum drain current and Rds(on) for BUK7631-100E,118?

Continuous drain current is 34 A at 25°C case temperature. Maximum on-resistance is 31 mOhm at 10 V gate drive and 10 A drain current.