55 V, 35 A N-channel TrenchMOS — the TO-220 workhorse
The NXP BUK7535-55A,127 is a 55 V, 35 A N-channel TrenchMOS MOSFET in a through-hole TO-220-3 package. It is part of the TrenchMOS series, designed for switching applications where low on-resistance and ruggedness matter.
35 mOhm at 10 V — the number that decides the thermal budget
The 35 mOhm Rds(on) is specified at 20 A and 10 V Vgs, which is the drive voltage for achieving the minimum on-resistance. At lower gate voltages the resistance climbs — the gate threshold voltage is 4 V max at 1 mA, so 10 V is the recommended drive for hard switching. The 872 pF input capacitance at 25 V drain-source means the gate driver sees a moderate load; switching losses are manageable with a standard totem-pole driver.
Active status, no LTB risk
It is ROHS3 compliant.
