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NXP Semiconductors BUK752R3-40E,127 — Logic ICs

Nexperia BUK752R3-40E,127 N-Channel MOSFET

MPNBUK752R3-40E,127
End of Life

Nexperia BUK752R3-40E,127, Automotive AEC-Q101 TrenchMOS N-Channel MOSFET, 40 V Vdss, 120 A Id, 2.3 mΩ Rds(on) at 10 V, TO-220AB through-hole, -55°C to 175°C.

$0.83Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

BUK752R3-40E,127 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Current - continuous drain (Id) @ 25°C120A (Ta)
Power dissipation293W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs2.3mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs109.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8500 pF @ 25 V

Product details

What this 40 V TrenchMOS part is for

The Nexperia BUK752R3-40E,127 is an N-channel TrenchMOS MOSFET from the automotive-grade AEC-Q101 series. It is designed for high-current switching in 12 V and 24 V automotive loads — think engine control units, electric power steering, DC-DC converters, and motor bridge drives where the bus sees transients up to 40 V. The TO-220AB through-hole package suits it for power stages that need a bolt-down tab for heat sinking.

The on-resistance is specified at 2.3 mΩ maximum with a 25 A drain current and 10 V gate drive. That is a low figure for a 40 V device in a TO-220, so at 25 A the conduction loss is roughly 1.44 W — manageable with a decent heatsink. The test condition matters: the 10 V gate drive is typical for automotive gate drivers, but if your design runs the gate at 5 V logic levels, expect the Rds(on) to roughly double from the 4.2 mΩ region at 4.5 V that similar TrenchMOS parts show. Plan the gate drive rail accordingly.

109.2 nC gate charge — sizing the driver

Total gate charge at 10 V is 109.2 nC. That is a moderate figure — a typical automotive gate driver with 2 A peak source/sink can switch this FET in the 50-100 ns range, which keeps switching losses in check for PWM frequencies up to 20-50 kHz. The input capacitance is 8500 pF at 25 V drain bias, so the driver sees a capacitive load that needs a clean layout with short gate-loop traces to avoid ringing.

120 A continuous drain and 293 W dissipation — thermal reality

The 120 A continuous drain rating at 25°C case temperature is the silicon limit, not a practical number without aggressive cooling. The 293 W power dissipation figure is likewise a theoretical maximum with the case held at 25°C. In a real engine-bay environment at 85°C ambient, derate heavily — a TO-220AB bolted to a decent heatsink might handle 30-50 A continuous before the junction hits the 175°C limit. The -55°C to 175°C junction range covers cold cranking and under-hood heat soak.

Lifecycle and sourcing posture

The AEC-Q101 qualification means it is production-released for automotive supply chains with the usual PPAP documentation available.

Frequently asked questions

Is BUK752R3-40E,127 automotive grade (AEC-Q101)?

Yes, it is part of the Automotive, AEC-Q101 qualified TrenchMOS series, making it suitable for automotive applications requiring the AEC-Q101 stress qualification.

What is the maximum gate charge of BUK752R3-40E,127?

The maximum total gate charge is 109.2 nC at a 10 V gate drive.