The NXP BUK7516-55A,127 is a 55 V, 65.7 A N-channel TrenchMOS power MOSFET in a through-hole TO-220AB package. It is designed for medium-voltage switching applications such as DC/DC converters, motor drives, and automotive power distribution where the 55 V drain-source rating provides margin on 12 V and 24 V rails.
Gate drive voltage and Rds(on) — the 10 V gate-drive requirement
The 16 mOhm Rds(on) is specified at Vgs = 10 V, which is the drive voltage for minimum on-resistance. The gate threshold voltage is 4 V maximum at 1 mA drain current, so a 5 V logic-level gate drive will turn the device on but with significantly higher Rds(on) — roughly double the headline figure. Designs using 3.3 V MCU outputs need a gate driver or level shifter to reach 10 V for full rated performance.
Derate the 65.7 A continuous current rating above 25°C case temperature per the datasheet's thermal curve.
Input capacitance and switching speed
The input capacitance (Ciss) is 2245 pF typical at Vds = 25 V. This is moderate for a 65 A rated MOSFET — the gate driver must supply enough peak current to charge and discharge this capacitance for fast switching. A 1 A gate driver will handle switching frequencies up to several hundred kHz; for higher frequencies, budget gate drive current accordingly.
Active lifecycle and compliance
It is ROHS3 compliant.