The NXP BUK7507-30B,127 is a TrenchMOS N-channel power MOSFET in a through-hole TO-220AB package. The 36 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies.
At 75 A, expect roughly 40 W conduction loss at full current (I²R), so the 157 W power dissipation rating at case temperature provides headroom, but the thermal design — heatsink, airflow, and mounting torque — must be sized for the actual load. The 10 V drive voltage is specified for the lowest Rds(on); at lower gate voltages the resistance rises significantly, so a 12 V or 10 V gate rail is recommended for best efficiency.
Gate charge and switching speed
A gate driver delivering 1 A can charge the gate in about 36 ns, enabling switching frequencies in the tens of kHz without excessive driver losses. The input capacitance of 2427 pF at 25 V drain-source is typical for this current class; the driver must supply the peak current to charge and discharge this capacitance during each switching cycle.
Package and mounting — TO-220AB through-hole
The TO-220AB package (also known as TO-220-3) is a standard through-hole power package. The tab is the drain. For full 75 A continuous current, the device must be bolted to a heatsink with thermal compound; the 157 W dissipation rating assumes the case is held at 25°C. The gate threshold voltage is 4 V maximum at 1 mA drain current, so a 5 V logic-level gate drive may not fully enhance the device — a 10 V gate drive is required for the rated Rds(on).
Lifecycle and compliance
It is ROHS3 compliant.