NXP Automotive AEC-Q101 TrenchMOS N-Channel MOSFET, 30 V, 120 A, 2.2 mOhm Rds(on) at 25 A, 10 V, 229 nC gate charge, TO-262-3 (I2PAK) through-hole, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 306W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 2.8V @ 1mA |
| Rds on (Max) @ id, vgs | 2.2mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 229 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14964 pF @ 25 V |
The BUK6E2R0-30C127: Rds(on) is 2.2 mOhm at 25 A, 10 V.
Total gate charge is 229 nC at 10 V. Input capacitance is 14964 pF at 25 V drain-source.
The I2PAK through-hole package has a large copper tab. Power dissipation is 306 W at case temperature.
This is the conduction loss figure to use for thermal budgeting at rated current.