Nexperia BUK662R5-30C,118 Automotive, AEC-Q101, TrenchMOS™ N-Channel MOSFET, 30 V Vdss, 100 A Id, 2.8 mOhm Rds(on) @ 10 V, 114 nC Qg, D2PAK (TO-263AB), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 204W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.8V @ 1mA |
| Rds on (Max) @ id, vgs | 2.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 114 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6960 pF @ 25 V |
Gate charge is specified at 114 nC maximum at 10 V, which sets the switching speed and gate-driver current requirement. Input capacitance (Ciss) is 6960 pF typical at 25 V drain bias, relevant for estimating switching losses and driver sizing. Power dissipation is rated at 204 W at case temperature, and the D2PAK (TO-263AB) surface-mount package with exposed tab provides a low thermal resistance path to the PCB when properly stitched with vias.
The maximum on-resistance is 2.8 mOhm at 25 A drain current with 10 V gate drive.
Maximum gate charge is 114 nC at 10 V gate-source voltage.
Continuous drain current is 100 A at 25°C case temperature.