Gate drive and switching behaviour
The gate threshold voltage is specified at 3 V maximum with 1 mA drain current, and the recommended drive voltage for achieving the rated on-resistance is 10 V. Gate charge is 44 nC at 10 V, and input capacitance is 1986 pF at 25 V drain-source. These numbers tell you the gate driver needs to source and sink enough current to switch the MOSFET cleanly at the target frequency — a 10 V gate drive rail is the practical minimum for full enhancement, and the 44 nC Qg means a standard automotive gate driver IC can handle it without excessive switching loss at moderate frequencies.
Package and mounting
Surface-mount DPAK (TO-252) with two leads plus a drain tab. The tab is the drain terminal and must be soldered to a large copper area on the PCB for thermal management. The package footprint is standard for automotive power MOSFETs — same as the DPAK used across the NXP TrenchMOS family. Reflow profile follows standard lead-free soldering; no special handling beyond normal MSL precautions.