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NXP Semiconductors BUJ403A/DG,127 — Logic ICs
NXP Semiconductors

BUJ403A/DG,127 NPN Power Transistor, 550 V, 6 A, TO-220-3

MPNBUJ403A/DG,127
End of Life

NPN power bipolar transistor, 550 V collector-emitter breakdown, 6 A continuous collector current, 100 W max power dissipation, TO-220-3 through-hole package, 150°C junction temperature.

$0.4Ref. price · indicative, final on quote
BUJ403A/DG,127 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
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Specifications

BUJ403A/DG,127 Technical Specifications
ParameterValue
Mounting typeThrough Hole
FET typeNPN
Voltage - collector emitter breakdown550 V
Current - collector (Ic)6 A
Current - collector cutoff100µA
DC current gain (hFE) (Min) @ ic, vce20 @ 500mA, 5V
Power - max100 W
Operating temperature150°C (TJ)
PackageBulk
CaseTO-220-3
Vce saturation (Max) @ ib, ic1V @ 400mA, 2A

Product details

550 V NPN for line-voltage switching

The BUJ403A/DG,127 is an NPN power bipolar transistor in a TO-220-3 through-hole package, rated for 550 V collector-emitter breakdown and 6 A continuous collector current. With a maximum power dissipation of 100 W and a junction temperature rating of 150°C, it is suited for offline flyback converters, switch-mode power supply clamp circuits, and ballast inverters where a single high-voltage NPN handles the primary-side switching.

Vce(sat) and conduction loss at 2 A

Saturation voltage is specified at 1 V maximum with a 400 mA base drive and 2 A collector current. At that operating point the conduction loss is 2 W, which must be considered against the 100 W package limit and the thermal derating for a 150°C junction. The 20 minimum DC current gain at 500 mA, 5 V gives a reasonable base-drive efficiency for a power switch of this voltage class.

Frequently asked questions

What is the closest pin-compatible alternative to BUJ403A?

For a pin-compatible replacement, compare the TO-220-3 footprint and the 550 V / 6 A ratings against other NPN power transistors in the same package from the same manufacturer family.