Skip to main content
NXP Semiconductors BFU768F,115 — Microcontrollers & Processors (MCU / MPU / DSP)

BFU768F,115 NPN RF Transistor, 13.1 dB Gain, SOT-343F

MPNBFU768F,115
End of Life

NXP Semiconductors BFU768F,115 NPN RF transistor, 13.1 dB gain, 1.1 dB noise figure, 70 mA Ic, 2.8 V Vce, SOT-343F package.

$0.47Ref. price · indicative, final on quote
PackagingSOT-343F
StockIn Stock (30)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BFU768F,115 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown2.8V
Current - collector (Ic)70mA
DC current gain (hFE) (Min) @ ic, vce155 @ 10mA, 2V
Power - max220mW
Operating temperature150°C (TJ)
Gain13.1dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-343F
Noise figure (dB typ @ f)1.1dB @ 2.4GHz

Product details

RF gain and noise figure at 2.4 GHz

The BFU768F,115: This NPN RF transistor delivers 13.1 dB gain at 2.4 GHz, making it suitable for the front-end LNA stage in a 2.4 GHz ISM-band receiver where the gain budget is tight. The 1.1 dB noise figure at 2.4 GHz sets the receiver noise floor — in a typical 2.4 GHz LNA design, the cascaded NF starts here, and every 0.1 dB above this figure eats into the link margin.

Bias envelope and power handling

Rated for a 2.8 V collector-emitter breakdown and 70 mA maximum collector current, the part operates in the small-signal regime — a common-emitter LNA biased at 10 mA, 2 V draws 20 mW, well inside the 220 mW max power dissipation. DC current gain of 155 minimum at 10 mA, 2 V gives a predictable bias point for the collector current — the base current is roughly 65 µA, which a simple resistor divider from a 2.8 V rail can supply without a precision current source.

Package and board integration

The 150°C junction temperature rating means the part can sit in a 85°C ambient with 65°C of headroom for self-heating — adequate for a 20 mW LNA dissipating through the SOT-343F paddle.

ROHS3 compliant — the part contains no restricted substances above the threshold, which clears it for EU-market equipment without an exemption declaration.

Frequently asked questions

What is the gain of BFU768F,115 at 2.4 GHz?

The BFU768F,115 delivers 13.1 dB gain at 2.4 GHz, with a 1.1 dB noise figure at the same frequency. This makes it a suitable LNA front-end for 2.4 GHz ISM-band receivers where the gain budget and noise floor are critical.

What package does BFU768F,115 come in?

The BFU768F,115 is supplied in the SOT-343F surface-mount package, also designated as 4-DFP. It is available in Tape & Reel (TR) or Cut Tape (CT) options for pick-and-place assembly.

What compliance documentation does NXP provide for BFU768F,115?

NXP provides ROHS3 compliance certification for the BFU768F,115. The part is free of restricted substances above the threshold, clearing it for EU-market equipment without an exemption declaration.