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NXP Semiconductors BFU630F,115 — Memory (DRAM / SRAM / Flash / EEPROM)

NXP BFU630F,115 RF Transistor NPN 5.5V 21GHz SOT-343F

MPNBFU630F,115
End of Life

NXP BFU630F,115 NPN RF transistor, 5.5V Vce, 21GHz fT, 30mA Ic, 200mW, SOT-343F surface-mount package, ROHS3 compliant.

$0.73Ref. price · indicative, final on quote
PackagingSOT-343F
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BFU630F,115 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown5.5V
Current - collector (Ic)30mA
DC current gain (hFE) (Min) @ ic, vce90 @ 5mA, 2V
Power - max200mW
Frequency21GHz
Operating temperature150°C (TJ)
Gain13dB ~ 22.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-343F
Noise figure (dB typ @ f)0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz

Product details

Package and layout — SOT-343F is not a generic SOT-23

SOT-343F surface-mount package, also designated as 4-DFP by the supplier.

DC bias and gain — what 90 hFE means at 2 V

DC current gain (hFE) is specified at 90 minimum at a collector current of 5 mA and a collector-emitter voltage of 2 V.

Frequently asked questions

Does BFU630F,115 come in tape and reel packaging?

Yes, the BFU630F,115 is available in Tape & Reel (TR) as well as Cut Tape (CT) options, suitable for both volume pick-and-place and prototype runs.

Can BFU630F,115 be used for 5.8 GHz applications?

Yes. The noise figure is specified at 1.3 dB typ at 5.8 GHz, and the 21 GHz fT provides enough gain headroom for LNA and driver stages in the 5.8 GHz band.