RF switch and attenuator element in SOD-882
The NXP BAP64LX,315 is a single PIN diode designed for RF switching and attenuator applications up to several GHz. Its 0.3 pF capacitance at 20 V reverse bias provides good off-state isolation, while the 1.5 Ohm series resistance at 100 mA forward current keeps insertion loss low in the on-state.
Parametric fit for RF front-end designs
The 60 V peak reverse voltage rating allows the BAP64LX,315 to handle moderate RF power levels without self-biasing — useful in antenna switch matrices or T/R switches where the RF voltage swing can exceed 30 V peak. Maximum forward current of 100 mA and power dissipation of 150 mW define the DC bias limit. In a typical shunt-switch configuration at 100 MHz, 10 mA bias gives roughly 15 Ohm on-resistance; the 1.5 Ohm floor at 100 mA is the low-loss ceiling for high-linearity paths.
Temperature range and operating environment
The SOD-882 package (SOD2 footprint) keeps parasitic inductance low — critical for maintaining the 0.3 pF capacitance spec at UHF frequencies.