0.35 pF at 20 V — off-state isolation in a SOD-523 footprint
The NXP BAP64-02,115 is a single PIN diode in the SOD-523 package, designed for RF switching and attenuator applications where low capacitance at reverse bias is the primary isolation lever. At 20 V reverse bias and 1 MHz, the capacitance measures 0.35 pF — low enough to keep the off-state port isolated well into the GHz range without adding a shunt inductor.
1.35 ohm series resistance — insertion loss in the on-state
Forward-biased at 100 mA and measured at 100 MHz, the series resistance is 1.35 ohm. This is the on-state insertion loss floor: lower resistance means less signal attenuation through the diode in the conducting state. The 100 mA maximum continuous current sets the bias ceiling for maintaining low Rds without exceeding the 715 mW power dissipation limit.
175 V peak reverse — high-voltage RF switching capability
The 175 V peak reverse voltage rating allows the part to handle RF signals with large voltage swings without forward-biasing into conduction.
The operating junction temperature range spans -65°C to 150°C, covering military avionics cold-soak and under-hood automotive hot-soak without derating. The 715 mW power dissipation limit assumes the SOD-523 solder pad is tied to a copper plane; in free-air the derating curve from the datasheet should be consulted for continuous bias above 85°C ambient.