RF power stage at 2.17 GHz — 22 dB gain in a PLD-1.5W package
The NXP AFT27S006NT1 is an LDMOS RF transistor designed for 2.17 GHz operation, delivering 22 dB gain and 28.8 dBm output power when tested at 28 V and 70 mA bias.
Biasing and thermal — what the 28 V, 70 mA test condition tells you
The test condition of 28 V drain and 70 mA quiescent current sets the class-AB bias point. The 65 V rated drain-source voltage gives headroom for load mismatch or supply transients in a 28 V nominal rail. Output power of 28.8 dBm (about 760 mW) at this bias means the device is running well below its saturated capability — typical for a driver stage where linearity matters more than peak power.
Package and mounting — PLD-1.5W footprint specifics
The PLD-1.5W is a proprietary surface-mount package with an exposed thermal pad. The PCB land pattern must match the NXP application note for this outline to achieve the rated thermal and RF performance.
Lifecycle and compliance — active, ROHS3, no replacement on record
No official successor or pin-compatible second source is documented in the available records.