RF power stage at 2.17 GHz — 22 dB gain in a PLD-1.5W package
The NXP AFT27S006NT1 is an LDMOS RF transistor designed for 2.17 GHz operation, delivering 22 dB gain and 28.8 dBm output power when tested at 28 V and 70 mA bias.
Biasing and thermal — what the 28 V, 70 mA test condition tells you
The test condition of 28 V drain and 70 mA quiescent current sets the class-AB bias point. The 65 V rated drain-source voltage gives headroom for load mismatch or supply transients in a 28 V nominal rail. Output power of 28.8 dBm (about 760 mW) at this bias means the device is running well below its saturated capability — typical for a driver stage where linearity matters more than peak power.
Package and mounting — PLD-1.5W footprint specifics
The PCB land pattern must match the NXP application note for this outline to achieve the rated thermal and RF performance.
No official successor or pin-compatible second source is documented in the available records.