1.5 W LDMOS driver at 2.17 GHz
The NXP AFT20S015GNR1 is an LDMOS RF power transistor in a TO-270BA surface-mount package, designed for infrastructure applications in the 2.17 GHz band. It delivers 1.5 W output with a gain of 17.6 dB when tested at 28 V and 132 mA bias.
Gain and bias — the driver-stage trade-off
The 17.6 dB gain at 2.17 GHz means this transistor can be driven from a typical +5 dBm source to full rated output, which simplifies the preceding gain stage. The 132 mA quiescent current sets the Class AB bias point — higher bias improves linearity at the cost of efficiency, so the bias network should be trimmed for the specific modulation scheme.
Voltage headroom and ruggedness
Rated drain voltage is 65 V, while the test condition is 28 V. That 37 V of headroom gives margin for load mismatch and supply transients in base station or repeater PAs. LDMOS devices are inherently rugged under high VSWR, but the 65 V rating confirms this part can survive into a 10:1 mismatch without immediate failure.