RF power LDMOS for 870 MHz transmitter stages
The NXP AFT09MS015NT1 is an RF power LDMOS transistor for 870 MHz band applications, delivering 16 W output power with 17.2 dB gain at 12.5 V and 100 mA test bias.
AFT09MS015NT1
NXP Semiconductors
NXP AFT09MS015NT1 RF power LDMOS transistor, 870 MHz, 16 W output, 17.2 dB gain, 12.5 V test, PLD-1.5W surface-mount package.
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - test | 12.5 V |
| Voltage - rated | 40 V |
| Current - test | 100 mA |
| Power - output | 16W |
| Frequency | 870MHz |
| Gain | 17.2dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | LDMOS |
| Case | PLD-1.5W |
Technical details
AFT09MS015NT1
[ALLOC] verified