RF power LDMOS for 870 MHz transmitter stages
The NXP AFT09MS015NT1 is an RF power LDMOS transistor for 870 MHz band applications, delivering 16 W output power with 17.2 dB gain at 12.5 V and 100 mA test bias.
AFT09MS015NT1 RF MOSFET LDMOS, 870 MHz, 16 W, PLD-1.5W
MPNAFT09MS015NT1
End of Life
NXP AFT09MS015NT1 RF power LDMOS transistor, 870 MHz, 16 W output, 17.2 dB gain, 12.5 V test, PLD-1.5W surface-mount package.
$6.23Ref. price · indicative, final on quote
PackagingPLD-1.5W
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - test | 12.5 V |
| Voltage - rated | 40 V |
| Current - test | 100 mA |
| Power - output | 16W |
| Frequency | 870MHz |
| Gain | 17.2dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | LDMOS |
| Case | PLD-1.5W |
Product details
Frequently asked questions
What is the gain of AFT09MS015NT1?
The listed gain is 17.2 dB at 870 MHz, measured at 12.5 V and 100 mA test bias. That is typical for a 16 W LDMOS device in this frequency band.
What package does AFT09MS015NT1 come in?
It is supplied in the PLD-1.5W surface-mount package, available in Tape & Reel or Cut Tape options.