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NXP USA Inc. SI2302DS,215 — Discrete Semiconductors

NXP USA Inc. SI2302DS,215

MPNSI2302DS,215
Obsolete
$0.4400Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI2302DS,215 Technical Specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation830mW (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id650mV @ 1mA (Min)
Rds on (Max) @ id, vgs85mOhm @ 3.6A, 4.5V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds230 pF @ 10 V