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NXP USA Inc. 2N7002BKT,115 — Discrete Semiconductors

NXP USA Inc. 2N7002BKT,115

MPN2N7002BKT,115
Obsolete
$0.3500Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2N7002BKT,115 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C290mA (Ta)
Power dissipation260mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-75, SOT-416
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs1.6Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds50 pF @ 10 V