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NXP USA Inc. 2N7000,126 — Discrete Semiconductors

NXP USA Inc. 2N7000,126

MPN2N7000,126
Obsolete
$0.4900Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2N7000,126 Technical Specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C300mA (Tc)
Power dissipation830mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds40 pF @ 10 V