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NXP USA Inc. 2N3906,116 — Discrete Semiconductors

NXP USA Inc. 2N3906,116

MPN2N3906,116
Obsolete
$0.4100Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2N3906,116 Technical Specifications
ParameterValue
Mounting typeThrough Hole
Transistor typePNP
Voltage - collector emitter breakdown40 V
Current - collector (Ic)200 mA
Current - collector cutoff50nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 10mA, 1V
Power - max500 mW
Frequency250MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic200mV @ 5mA, 50mA