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Nexperia USA Inc. — Memory (DRAM / SRAM / Flash / EEPROM)

Nexperia USA Inc. Memory (DRAM / SRAM / Flash / EEPROM) — 76 part numbers with specifications and datasheets. Filter by key specs and request a quote on ICBOMS.

Supplier Device Package
16-TSSOP · 14-DHVQFN (2.5x3) · 16-SO · SC-74A
Package / Case
16-TSSOP (0.173", 4.40mm Width) · 14-VFQFN Exposed Pad · 16-SOIC (0.154", 3.90mm Width) · SC-74A, SOT-753
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA, 1V · 200 @ 2mA, 5V · 420 @ 2mA, 5V · 110 @ 2mA, 5V
Power - Max
300 mW · 300mW · 200 mW · 350mW
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA · 300mV @ 5mA, 100mA · 400mV @ 5mA, 100mA · 500mV @ 50mA, 500mA
Frequency - Transition
100MHz · 140MHz · 155MHz · 175MHz
Logic Type
Monostable · Buffer, Non-Inverting · AND Gate · Buffer, Inverting
Current - Collector (Ic) (Max)
500 mA · 100mA · 100 mA · 1A

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