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Nexperia USA Inc. PBSS8110T,215 — Memory (DRAM / SRAM / Flash / EEPROM)

Nexperia USA Inc. PBSS8110T,215

MPNPBSS8110T,215
Active

TRANS NPN 100V 1A TO236AB

$0.49Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PBSS8110T,215 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown100 V
Current - collector (Ic)1 A
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce150 @ 250mA, 10V
Power - max480 mW
Frequency100MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic200mV @ 100mA, 1A