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Linear Integrated Systems, Inc. — Memory (DRAM / SRAM / Flash / EEPROM)

Linear Integrated Systems, Inc. Memory (DRAM / SRAM / Flash / EEPROM) — 9 part numbers with specifications and datasheets. Filter by key specs and request a quote

Package / Case
TO-206AF, TO-72-4 Metal Can · 8-SOIC (0.154", 3.90mm Width) · TO-71-6 Metal Can · SOT-23-6
Supplier Device Package
TO-72-4 · 8-SOIC · TO-71 · SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds
3pF @ 10V · 0.8pF @ 15V · 5pF @ 10V · 12pF @ 10V
Power - Max
300 mW · 500mW · 500 mW · 350 mW
FET Type
N-Channel · 2 N-Channel · 2 N-Channel (Dual)
Operating Temperature
-55°C ~ 135°C (TJ) · -55°C ~ 150°C · -55°C ~ 150°C (TJ)
Voltage - Breakdown (V(BR)GSS)
40 V · 35 V · 25 V
Current - Drain (Idss) @ Vds (Vgs=0)
80 µA @ 10 V · 7 mA @ 10 V

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