IXYS IXTY1R6N100D2
MPNIXTY1R6N100D2
Active
MOSFET N-CH 1000V 1.6A TO252
$3.07Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Depletion |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1000 V |
| Current - continuous drain (Id) @ 25°C | 1.6A (Tc) |
| Power dissipation | 100W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Depletion Mode |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Rds on (Max) @ id, vgs | 10Ohm @ 800mA, 0V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 645 pF @ 25 V |