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IXYS IXTY02N50D

IXYS IXTY02N50D

MPNIXTY02N50D
Active

MOSFET N-CH 500V 200MA TO252

$2.4Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTY02N50D specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C200mA (Tc)
Power dissipation1.1W (Ta), 25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Rds on (Max) @ id, vgs30Ohm @ 50mA, 0V
Input capacitance (Ciss) (Max) @ vds120 pF @ 25 V