IXTY02N50D

IXYS · Depletion Series

MOSFET N-CH 500V 200MA TO252

IXYS IXTY02N50D
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Technical specifications

IXTY02N50D specifications
Parameter / AttributeSpecification / Value
SeriesDepletion
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C200mA (Tc)
Power dissipation1.1W (Ta), 25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Rds on (Max) @ id, vgs30Ohm @ 50mA, 0V
Input capacitance (Ciss) (Max) @ vds120 pF @ 25 V
IXTY02N50D
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