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IXYS IXTY01N100D

IXYS IXTY01N100D

MPNIXTY01N100D
Active

MOSFET N-CH 1000V 400MA TO252AA

$3.19Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTY01N100D specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)0V
Current - continuous drain (Id) @ 25°C400mA (Tc)
Power dissipation1.1W (Ta), 25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 25µA
Rds on (Max) @ id, vgs80Ohm @ 50mA, 0V
Gate charge (Qg) (Max) @ vgs5.8 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds100 pF @ 25 V