IXTY01N100
IXYS
MOSFET N-CH 1000V 100MA TO252AA
[IN STOCK] In Stock: 65 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100mA (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 25µA |
| Rds on (Max) @ id, vgs | 80Ohm @ 100mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 54 pF @ 25 V |
IXTY01N100
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