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IXYS IXTY01N100

IXTY01N100 N-CH MOSFET 1000V 100mA TO-252AA — IXYS | ICBOMS

MPNIXTY01N100
Active

MOSFET N-CH 1000V 100MA TO252AA

$2.75Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTY01N100 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100mA (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 25µA
Rds on (Max) @ id, vgs80Ohm @ 100mA, 10V
Gate charge (Qg) (Max) @ vgs6.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds54 pF @ 25 V