ISSI, Integrated Silicon Solution Inc IS61NVP102418-200B3I
MPNIS61NVP102418-200B3I
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.375V ~ 2.625V |
| Clock frequency | 200 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, SDR |
| Access time | 3.1 ns |
| Memory size | 18Mbit |
| Memory format | SRAM |
| Case | 165-TBGA |
| Memory organization | 1M x 18 |