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ISSI, Integrated Silicon Solution Inc IS66WVQ8M4DBLL-133BLI — Crystals & Oscillators

IS66WVQ8M4DBLL-133BLI — ISSI 32Mbit PSRAM, 133MHz Quad SPI

MPNIS66WVQ8M4DBLL-133BLI
Active

ISSI Integrated Silicon Solution Inc, PSRAM, 32Mbit, 133MHz, SPI Quad I/O, 8M x 4 organization, 2.7V to 3.6V, -40°C to 85°C, 24-TFBGA (6x8), Surface Mount, Tray.

$3.57Ref. price · indicative, final on quote
Packaging24-TBGA
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IS66WVQ8M4DBLL-133BLI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.7V ~ 3.6V
Frequency133 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologyPSRAM (Pseudo SRAM)
Memory size32Mbit
Memory formatPSRAM
Case24-TBGA
Memory organization8M x 4
Write cycle time - word, page45ns

Product details

32Mbit pseudo-SRAM at 133 MHz Quad SPI

The IS66WVQ8M4DBLL-133BLI is a volatile pseudo-SRAM organized 8M x 4, clocked at 133 MHz over a Quad I/O SPI interface. At that speed the 45 ns write-cycle time is the limiting factor for burst-write throughput — the Quad I/O bus delivers four bits per SCK edge, but the memory array itself needs that 45 ns per word or page write before the next operation can begin.

24-TFBGA footprint and board integration

The supplier device package is a 24-TFBGA (6x8 mm) with surface-mount tray packing. BGA rework is sensitive to the paste-print and reflow profile — the 45 ns write cycle is a memory-array spec, not a thermal constraint, but the reball process for this pitch requires a hot-air or IR rework station capable of uniform preheat across the 6×8 mm die area to avoid package crack on thermal cycling. Because the memory is volatile, there is no non-volatile storage content to preserve during a power-off cycle — the bring-up checklist does not need to account for data-retention state, which simplifies the boot sequence compared to flash or EEPROM-backed designs.