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ISSI, Integrated Silicon Solution Inc IS25LP512M-JLLE-TR — Memory (DRAM / SRAM / Flash / EEPROM)

ISSI, Integrated Silicon Solution Inc IS25LP512M-JLLE-TR

MPNIS25LP512M-JLLE-TR
Active

IC FLASH 512MBIT SPI/QUAD 8WSON

$10.2300Ref. price · indicative, final on quote
Packaging8-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IS25LP512M-JLLE-TR specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.3V ~ 3.6V
Clock frequency133 MHz
Memory interfaceSPI - Quad I/O, QPI, DTR
Operating temperature-40°C~105°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyFLASH - NOR
Memory size512Mbit
Memory formatFLASH
Case8-WDFN Exposed Pad
Memory organization64M x 8
Write cycle time - word, page1.6ms