Infineon Technologies IRLT Series

2 variants · Infineon Technologies

About the Infineon Technologies IRLT Series

The Infineon Technologies IRLT Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of SOT-23-6, drive voltage (Max rds on, min rds on) of 2.5V, 4.5V and mounting of Surface Mount. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and FET type, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Infineon Technologies IRLT Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 6.9A (Ta) · 8.3A (Ta)
Drain to source voltage: 20 V · 30 V
FET type: N-Channel · P-Channel
Gate charge (Qg) (Max) @ vgs: 11 nC @ 4.5 V · 12 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds: 905 pF @ 10 V · 1010 pF @ 25 V
Rds on (Max) @ id, vgs: 17.5mOhm @ 8.3A, 4.5V · 32mOhm @ 6.9A, 4.5V

Shared specifications

Case: SOT-23-6
Drive voltage (Max rds on, min rds on): 2.5V, 4.5V
Mounting: Surface Mount
Operating temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)
Power dissipation: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Vgs: ±12V
Vgs(th) (Max) @ id: 1.1V @ 10µA

Variant comparison

Parameter	IRLTS2242TRPBF	IRLTS6342TRPBF
Current - continuous drain (Id) @ 25°C	6.9A (Ta)	8.3A (Ta)
Drain to source voltage	20 V	30 V
FET type	P-Channel	N-Channel
Gate charge (Qg) (Max) @ vgs	12 nC @ 4.5 V	11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds	905 pF @ 10 V	1010 pF @ 25 V
Rds on (Max) @ id, vgs	32mOhm @ 6.9A, 4.5V	17.5mOhm @ 8.3A, 4.5V

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