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Infineon Technologies SPA16N50C3XKSA1 — Discrete Semiconductors

Infineon SPA16N50C3XKSA1 CoolMOS™ N-Channel MOSFET, 560V

MPNSPA16N50C3XKSA1
NRND

Infineon CoolMOS™ SPA16N50C3XKSA1, N-Channel MOSFET, 560 V drain-source, 16 A continuous drain, 280 mOhm Rds(on) at 10 A/10 V, TO-220-3 Full Pack, PG-TO220-3-31, -55°C to 150°C.

$3.9300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPA16N50C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage560 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 675µA
Rds on (Max) @ id, vgs280mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 25 V

Product details

The Infineon SPA16N50C3XKSA1 is an N-channel CoolMOS™ power MOSFET designed for high-voltage switching applications. Typical applications include power-factor correction (PFC) stages, offline switch-mode power supplies, and lighting ballasts where CoolMOS™'s low gate charge and fast switching reduce losses.

This means Infineon is not actively promoting it for new projects, though it remains available for existing production runs and replacement orders. Buyers should plan for a transition to a current-generation CoolMOS™ or equivalent part for any new BOM line.

Gate charge and switching losses

Maximum gate charge is 66 nC at 10 V. Input capacitance is 1600 pF at 25 V drain-source.

Thermal and mounting considerations

Frequently asked questions

Is SPA16N50C3XKSA1 obsolete?

It is still available for existing production runs and replacement orders, but Infineon does not recommend it for new designs. For new projects, consider a current-generation CoolMOS™ part with similar ratings.