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Infineon Technologies SPA16N50C3 — Discrete Semiconductors

Infineon SPA16N50C3 CoolMOS N-Ch MOSFET

MPNSPA16N50C3
Active

Infineon CoolMOS™ SPA16N50C3, N-Channel MOSFET, 500 V Vdss, 16 A continuous drain, 280 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, PG-TO220-3-111, -55°C to 150°C TJ.

Infineon Technologies SPA16N50C3 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SPA16N50C3 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 675µA
Rds on (Max) @ id, vgs280mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 25 V

Product details

500 V, 16 A CoolMOS — the TO-220 Full Pack anchor for PFC and SMPS

The SPA16N50C3: Housed in a TO-220 Full Pack (PG-TO220-3-111), it delivers the thermal isolation of a fully encapsulated package — the metal tab is electrically isolated, so no insulating pad or washer is needed between the device and the heatsink. The 280 mOhm on-resistance at 10 A, 10 V is the figure to budget for conduction loss in a continuous-conduction-mode PFC stage or a flyback primary switch.

Gate charge, capacitance, and switching behaviour

Input capacitance (Ciss) is 1600 pF at 25 V drain-source.

For dual-sourcing or second-source planning, no pin-compatible cross-reference is listed in the product record, so the BOM should treat this as a single-source line item unless a validated alternate is qualified independently.

Frequently asked questions

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What is the equivalent of SPA16N50C3?

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What is the pinout of SPA16N50C3?

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