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Infineon Technologies SPA15N60CFDXKSA1 — Discrete Semiconductors

Infineon SPA15N60CFDXKSA1 CoolMOS N-Ch MOSFET, 650 V, 13.4 A

MPNSPA15N60CFDXKSA1
NRND

Infineon CoolMOS™ N-channel MOSFET, SPA15N60CFDXKSA1, 650 V drain-source, 13.4 A continuous, 330 mOhm Rds(on), TO-220-3 Full Pack, -55°C to 150°C.

$3.6717Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPA15N60CFDXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13.4A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 750µA
Rds on (Max) @ id, vgs330mOhm @ 9.4A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1820 pF @ 25 V

Product details

The Infineon SPA15N60CFDXKSA1 is an N-channel CoolMOS power MOSFET from the CoolMOS series, built on a charge-compensation technology that keeps Rds(on) low for the voltage class. Rated for 650 V drain-source and 13.4 A continuous at 25°C case temperature, it targets high-voltage switched-mode power supplies, PFC stages, and flyback converters where low conduction loss and fast switching matter.

That means Infineon still manufactures it for existing production builds, but it is no longer qualified into new projects. For a new design, the procurement move is to identify a pin-compatible replacement within the CoolMOS family before the next prototype spin. The official successor is not listed in the record, so cross-referencing against other 650 V CoolMOS N-channel devices in the same TO-220 Full Pack footprint is the practical path.

That is the number to use for conduction loss calculations at full load. Gate charge totals 84 nC at 10 V, which sets the drive current requirement for the gate driver — a 1 A driver charges the gate in roughly 84 ns, though practical switching speed also depends on the driver's source/sink impedance and the external gate resistor. Input capacitance is 1820 pF at 25 V drain-source, a moderate figure that keeps the Miller plateau manageable in hard-switched topologies.

Frequently asked questions

Is SPA15N60CFDXKSA1 compatible with standard TO-220 footprint?

It uses a TO-220-3 Full Pack package (PG-TO220-3-31), which has the same lead pitch and outline as a standard TO-220 but with a fully molded back that electrically isolates the tab. The footprint on the PCB is identical to a standard TO-220; the difference is in heatsink mounting — no insulating pad required.