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Infineon Technologies SPA12N50C3XKSA1 — Discrete Semiconductors

Infineon SPA12N50C3XKSA1 CoolMOS™ N-Ch 560V 11.6A TO-220FP

MPNSPA12N50C3XKSA1
Obsolete

Infineon CoolMOS™ SPA12N50C3XKSA1, N-Channel MOSFET, 560V Vdss, 11.6A Id, 380mOhm Rds(on) @ 7A, TO-220-3 Full Pack, -55°C to 150°C.

$2.5461Ref. price · indicative, final on quote
Infineon Technologies SPA12N50C3XKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPA12N50C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage560 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11.6A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 500µA
Rds on (Max) @ id, vgs380mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

560 V / 11.6 A — sizing the power stage

The 33 W package limit (Tc) means the thermal design needs a heatsink for any continuous load above a few amps.

TO-220 Full Pack — isolated tab, no pad needed

The PG-TO220-3-31 is a full-pack (isolated) variant. The trade-off is thermal resistance — expect roughly double the junction-to-case thermal impedance compared to a standard TO-220 with an exposed metal tab. The 33 W dissipation ceiling reflects that. For through-hole mounting, the three leads are standard 0.1-inch pitch; the body is wider than a standard TO-220, so check the heatsink clip clearance if you are retrofitting an existing layout.

The 150°C Tj(max) is typical for CoolMOS™; the 3.9 V maximum threshold at 500 µA is on the higher side, which helps with dv/dt immunity in half-bridge topologies but means the gate drive must swing cleanly above 10 V to keep Rds(on) in spec at cold temperatures.

Frequently asked questions

What is the replacement or equivalent for SPA12N50C3XKSA1?

Infineon does not list a direct pin-compatible successor for this specific order code in the lifecycle record. The CoolMOS™ C3 generation has been superseded by newer families like CoolMOS™ P7 and CFD7, but those are different process generations and may have different gate drive characteristics or package options. A parametric search for a 560 V, 11 A class, TO-220 Full Pack N-channel FET with 10 V gate drive is the practical approach for a replacement — verify the gate charge and capacitance match the switching frequency of your design before swapping.

What is the Rds(on) of SPA12N50C3XKSA1?

The maximum Rds(on) is 380 mOhm at 7 A drain current with 10 V gate drive. This is specified at 25°C junction temperature; expect the resistance to approximately double at 150°C junction, which is typical for CoolMOS™ devices.