Skip to main content
Infineon Technologies SPA08N50C3XKAS1 — Discrete Semiconductors

Infineon SPA08N50C3XKAS1 CoolMOS N-Ch MOSFET, 560V 7.6A

MPNSPA08N50C3XKAS1
Active

Infineon CoolMOS™ series, N-Channel MOSFET, 560 V Drain-Source Voltage, 7.6 A Continuous Drain Current at 25°C, 600 mOhm RDS(on) at 4.6 A, 10 V, Through Hole, TO-220-3 Full Pack, -55°C to 150°C Junction.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SPA08N50C3XKAS1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage560 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.6A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 350µA
Rds on (Max) @ id, vgs600mOhm @ 4.6A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds750 pF @ 25 V

Product details

The SPA08N50C3XKAS1: Housed in a through-hole TO-220-3 Full Pack package with an isolated mounting hole. The 560 V drain-source rating provides margin for universal AC input with reflected voltage and leakage-inductance spikes.

The 560 V Vdss is the maximum drain-to-source voltage the device can block in the off state. In a typical flyback converter, the primary-side MOSFET sees a reflected voltage plus a ringing spike. The 560 V rating gives derating margin for reliable operation over line and load transients. In a real enclosure where the case temperature rises, the current must be derated per the thermal curve in the datasheet. The 32 W power dissipation ceiling at the case sets the heatsink requirement.

For BOM planning, this part carries no imminent LTB risk, and the CoolMOS™ family has broad second-source coverage from other manufacturers offering pin-compatible 560 V / 7 A–8 A TO-220 Full Pack MOSFETs. If dual-sourcing is a requirement, qualify an alternate now rather than during an allocation event. The PG-TO220-3-111 supplier package is the Infineon-specific variant of the standard TO-220 Full Pack.

Frequently asked questions

What is the RDS(on) of SPA08N50C3XKAS1?

The maximum on-resistance is 600 mΩ at a drain current of 4.6 A and a gate-to-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in the thermal design.