Infineon CoolMOS™ N-Channel MOSFET, 560 V drain-source, 4.5 A continuous drain, 950 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 560 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.5A (Tc) |
| Power dissipation | 31W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.9V @ 200µA |
| Rds on (Max) @ id, vgs | 950mOhm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 470 pF @ 25 V |
The SPA04N50C3XKSA1: N-channel MOSFET, 560 V drain-source, 4.5 A continuous drain, 950 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack.
This part comes in a TO-220-3 Full Pack (PG-TO220-3-31) — the plastic body encloses the back of the die so the mounting tab is electrically isolated. Through-hole mounting suits point-of-load boards where the FET gets bolted to a chassis or heatsink.
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