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Infineon Technologies SPA02N80C3XKSA1 — Discrete Semiconductors

Infineon SPA02N80C3XKSA1 CoolMOS N-Ch MOSFET

MPNSPA02N80C3XKSA1
Last Buy

Infineon CoolMOS™ SPA02N80C3XKSA1, N-Channel MOSFET, 800 V drain-to-source, 2 A continuous drain current, 2.7 Ohm Rds(on) at 1.2 A and 10 V, gate charge 16 nC at 10 V, TO-220-3 Full Pack package, -55°C to 150°C junction temperature.

$1.3800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPA02N80C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation30.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 120µA
Rds on (Max) @ id, vgs2.7Ohm @ 1.2A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds290 pF @ 100 V

Product details

If you have an active BOM line using the SPA02N80C3XKSA1, now is the time to secure lifetime buy quantities or qualify a replacement.

At lower gate voltages the on-resistance climbs — the drive voltage spec of 10 V for maximum Rds(on) tells you to plan for a 10 V gate supply if you want the lowest drop. The input capacitance of 290 pF at 100 V drain-source confirms a light capacitive load on the driver.

Package and mounting — TO-220 Full Pack isolation

The TO-220-3 Full Pack (PG-TO220-3-31) is a through-hole package with a fully isolated backside tab. No extra insulating washer is needed between the tab and the heatsink, which simplifies assembly and improves thermal transfer. The maximum power dissipation is 30.5 W at the case temperature, so a decent heatsink is required if you run near the 2 A continuous limit.

Frequently asked questions

What is the Rds(on) spec of SPA02N80C3XKSA1?

The maximum on-resistance is 2.7 Ohm at a drain current of 1.2 A and a gate-to-source voltage of 10 V.

What is a direct replacement for SPA02N80C3XKSA1?

For a pin-compatible alternative, look for another N-channel CoolMOS device in the TO-220 Full Pack with an 800 V drain-source rating and similar Rds(on) and gate charge — but cross-reference with Infineon's current portfolio or consult a sourcing specialist for a validated second source.

Does SPA02N80C3XKSA1 cross reference to IPA60R280C6?

No cross-reference to the IPA60R280C6 is recorded. The IPA60R280C6 is a 600 V device, while the SPA02N80C3XKSA1 is rated for 800 V — they are not direct equivalents.