Infineon Technologies ISZ080N10NM6ATMA1
MPNISZ080N10NM6ATMA1
End of Life
TRENCH >=100V PG-TSDSON-8
$6.91464Price · pay online now
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Ta), 75A (Tc) |
| Power dissipation | 3W (Ta), 100W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.3V @ 36µA |
| Rds on (Max) @ id, vgs | 8.04mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |